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Dopant Incorporation during Rapid Solidification

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Abstract

Incorporation of Group III, IV, V dopants in silicon occurs as a result of solute trapping during laser annealing. Distribution coefficients and substitutional solubilities are far greater than equilibrium values, and can be functions of growth velocity and crystal orientation. Mechanisms limiting dopant incorporation at high concentrations are identified and discussed.

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Authors and Affiliations

  1. Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN, 37830

    C. W. White, D. M. Zehner, J. Narayan, O. W. Holland & B. R. Appleton

  2. Motorola Inc., Phoenix, AZ

    S. R. Wilson

Authors
  1. C. W. White
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  2. D. M. Zehner
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  3. J. Narayan
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  4. O. W. Holland
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  5. B. R. Appleton
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  6. S. R. Wilson
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Additional information

Research sponsored by the Division of Materials Sciences, U.S. Department of Energy under contract W-7405-eng-26 with Union Carbide Corporation.

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White, C.W., Zehner, D.M., Narayan, J. et al. Dopant Incorporation during Rapid Solidification. MRS Online Proceedings Library 13, 287–296 (1982). https://doi.org/10.1557/PROC-13-287

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  • DOI: https://doi.org/10.1557/PROC-13-287

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