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Characterization and light emission properties of osmium silicides synthesized by low energy ion implantation

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Low energy (55 KeV) Osmium ( Os− ) negative ion beam was used to implant (5×1016 atoms/cm2 ) into p-type-Si (100). The implantation was performed with the ion source of a National Electrostatic Corp. 3 MV Tandem accelerator. The implanted sample was subsequently annealed at 650 °C in a gas mixture that was 4% H2 + 96% Ar. Rutherford Backscattering spectrometry (RBS) analysis with 1.5 MeV Alpha particles was used to monitor the precipitate formation. Photoluminescence (PL) measurements were also performed to study possible applications of silicides in light emission. Cross-sectional Scanning Electron Microscopy (X-SEM) was performed for topographic image of the implanted region. RBS along with PL measurements indicate that the presence of osmium silicide (Os2Si3) phase for light emission in the implanted region of the sample.

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Authors and Affiliations

  1. Physics, University of North Texas, 211 Avenue A, 76203, Denton, TX, USA

    P. R. Poudel, K. Hossain, J. Li, A. Neogi, B. Rout, J. L. Duggan & F. D. McDaniel

  2. Material Science and Engineering, University of North Texas, 3940 North ELM st, 76207, Denton, TX, USA

    B. Gorman

Authors
  1. P. R. Poudel
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  2. K. Hossain
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  3. J. Li
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  4. B. Gorman
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  5. A. Neogi
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  6. B. Rout
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  7. J. L. Duggan
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  8. F. D. McDaniel
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Poudel, P.R., Hossain, K., Li, J. et al. Characterization and light emission properties of osmium silicides synthesized by low energy ion implantation. MRS Online Proceedings Library 1066, 10660711 (2007). https://doi.org/10.1557/PROC-1066-A07-11

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  • DOI: https://doi.org/10.1557/PROC-1066-A07-11

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