Abstract
The quantum efficiency (QE) of photoluminescence (PL) has been estimated in GaN and ZnO samples. A Si-doped GaN layer grown by molecular beam epitaxy (MBE) exhibited the highest QE of about 90% at low temperatures. Recombination via the shallow donor-acceptor pair transitions dominated in this sample. In contrast, a bulk ZnO crystal with the QE of PL of about 85% contained almost no defect- or impurity-related PL signatures besides the emission attributed to free and bound excitons. The sources of radiative and nonradiative recombination in GaN and ZnO are discussed.
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Acknowledgment
This work was funded by AFOSR (Dr. G. L. Witt), NSF (Dr. L. Hess and Dr. U. Varshney), and ONR (Dr. C. E. C. Wood).
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Reshchikov, M., Gu, X., Nemeth, B. et al. High quantum efficiency of photoluminescence in GaN and ZnO. MRS Online Proceedings Library 892, 2311 (2005). https://doi.org/10.1557/PROC-0892-FF23-11
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DOI: https://doi.org/10.1557/PROC-0892-FF23-11