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Quality control of epitaxial LiCoO2 thin films grown by pulsed laser deposition

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Abstract

Thin films of c-axis-oriented LiCoO2 were epitaxially grown by pulsed laser deposition (PLD). The ablation laser conditions greatly affect the crystal quality of the epitaxial LiCoO2 thin films. In addition, high-quality LiCoO2 thin films were found to grow without any impurity phases under relatively low oxygen partial pressure, although high pressure had been often selected to suppress the formation of Co3O4 with a lower valence state as an impurity. This result clearly indicates that the ablation laser conditions are an essential growth parameter, and that composition control is indispensable to grow high-quality complex compound thin films by PLD.

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Correspondence to T. Ohnishi.

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The purpose of this Materials Communications section is to provide accelerated publication of important new results in the fields regularly covered by Journal of Materials Research. Materials Communications cannot exceed four printed pages in length, including space allowed for title, figures, tables, references, and an abstract limited to about 100 words.

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Ohnishi, T., Hang, B.T., Xu, X. et al. Quality control of epitaxial LiCoO2 thin films grown by pulsed laser deposition. Journal of Materials Research 25, 1886–1889 (2010). https://doi.org/10.1557/JMR.2010.0250

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  • DOI: https://doi.org/10.1557/JMR.2010.0250

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