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A transmission electron microscopy investigation of SiC films grown on Si(111) substrates by solid-source molecular beam epitaxy

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Abstract

The effects of different growth parameters on the microstructure of the SiC films formed during simultaneous two-source molecular-beam-epitaxial (MBE) deposition have been investigated. Substrate temperatures as low as 750–900 °C have been used. The relationship between a number of different growth morphologies and deposition conditions has been established. The formation of single-crystal 3C films has been found to occur at low growth rates but within a limited Si: C adatom ratio. A combination of transmission electron microscopy (TEM) and atomic force microscopy (AFM) has been used to examine the different films, and the results of these investigations are described.

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Authors and Affiliations

  1. Institut für Festkörperphysik, Friedrich-Schiller-Universität Jena, Max-Wien-Platz 1, D-07743, Jena, Germany

    U. Kaiser, A. Fissel & W. Richter

  2. Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, CB2 3QZ, Cambridge, United Kingdom

    S. B. Newcomb & W. M. Stobbs

  3. Research Institute for Technical Physics, H-1325, P.O. Box 76, Budapest, Hungary

    M. Adamik

Authors
  1. U. Kaiser
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  2. S. B. Newcomb
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  3. W. M. Stobbs
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  4. M. Adamik
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  5. A. Fissel
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  6. W. Richter
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b) Deceased.

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Kaiser, U., Newcomb, S.B., Stobbs, W.M. et al. A transmission electron microscopy investigation of SiC films grown on Si(111) substrates by solid-source molecular beam epitaxy. Journal of Materials Research 13, 3571–3579 (1998). https://doi.org/10.1557/JMR.1998.0486

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  • DOI: https://doi.org/10.1557/JMR.1998.0486

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