Abstract
The ion-assisted nucleation of diamond was studied in a microwave plasma chemical vapor deposition system to gain insights into the processes controlling this phenomenon. The dependence of the nucleation density on bias voltage and temperature, as well as experiments with an electrically isolated substrate, are consistent with an ion bombardment mechanism for diamond nucleation. However, the growth of these nuclei is dominated by neutral species rather than ions. Measurements of the bias current under various conditions also provide details on the roles of the incident ion flux and substrate electron emission during this process. Furthermore, Monte Carlo simulations of the ion energy distribution at the substrate are compared to experimental measurements. Preferential sputtering, thermal spike, and carbon subplantation nucleation mechanisms are assessed based on the experimental and modeling results.
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S. Iijima, Y. Aikawa, and K. Baba, Appl. Phys. Lett. 57, 2646 (1990).
S. Iijima, Y. Aikawa, and K. Baba, J. Mater. Res. 6, 1491 (1991).
S. Yugo, T. Kanai, T. Kimura, and T. Muto, Appl. Phys. Lett. 58, 1036 (1991).
B. R. Stoner, B. E. Williams, S. D. Wolter, K. Nishimura, and J.T. Glass, J. Mater. Res. 7, 257 (1992).
B. Stoner, G-H. M. Ma, S. Wolter, and J. Glass, Phys. Rev. B 45, 11067 (1992).
X. Jiang, R. Six, C-P. Klages, R. Zachai, M. Hartweg, and H-J. Füßer, Diam. Relat. Mater. 2, 407 (1992).
Y. Shigesato, R. Boekenhauer, and B. Sheldon, Appl. Phys. Lett. 63, 324 (1993).
B. Sheldon, R. Csencsits, J. Rankin, R. Boekenhauer, and Y. Shigesato, J. Appl. Phys. 75, 5001 (1994).
J. Gerber, M. Weiler, O. Sorh, K. Jung, and H. Ehrhardt, Diam. Relat. Mater. 3, 506 (1994).
R. Beckmann, B. Sobisch, W. Kulisch, and C. Rau, Diam. Relat. Mater. 3, 555 (1994).
S. McGinnis, M. Kelly, and S. Hagström, Appl. Phys. Lett. 66, 3117 (1995).
W. Kulisch, B. Sobisch, M. Kuhr, and R. Beckmann, Diam. Relat. Mater. 4, 401 (1995).
J. Gerber, S. Sattel, K. Jung, H. Ehrhardt, and J. Robertson, Diam. Relat. Mater. 4, 559 (1995).
J. Robertson, J. Gerber, S. Sattel, M. Weiler, K. Jung, and H. Ehrhardt, Appl. Phys. Lett. 66, 3287 (1995).
X. Jiang, K. Schiffmann, and C-P. Klages, Phys. Rev. B 50, 8402 (1994).
X. Jiang, M. Paul, C-P. Klages, and C. L. Jia, in Proceedings of the 4th International Symposium on Diamond Materials, edited by K. Ravi and J. Dismukes (The Electrochemical Society, Pennington, NJ, 1995), p. 50.
S. McGinnis, M. Kelly, S. Hagström, and R. Alvis, J. Appl. Phys. 79, 170 (1996).
B. Stoner and J. Glass, Appl. Phys. Lett. 60, 698 (1992).
X. Jiang, C-P. Klages, R. Zachai, M. Hartweg, and H-J. Füßer, Appl. Phys. Lett. 62, 3438 (1993).
S. D. Wolter, B. R. Stoner, J. T. Glass, P. J. Ellis, D. S. Buhaenko, C. E. Jenkins, and P. Southworth, Appl. Phys. Lett. 62, 1215 (1993).
B. R. Stoner, S. Sahaida, J. Bade, P. Southworth, and P. Ellis, J. Mater. Res. 8, 1334 (1993).
D. Milne, P. Roberts, P. John, M. Jubber, M. Liehr, and J. Wilson, Diam. Relat. Mater. 4, 394 (1995).
S. McGinnis, M. Kelly, and S. Hagström, in Proceedings of the 4th International Symposium on Diamond Materials, edited by K. Ravi and J. Dismukes (The Electrochemical Society, Pennington, NJ, 1995), p. 73.
S. Yugo, T. Kimura, and T. Muto, Vacuum 41, 1364 (1990).
B. Stoner, G. Ma, S. Wolter, W. Zhu, Y-C. Wang, R. Davis, and J. Glass, Diam. Relat. Mater. 2, 142 (1993).
R. Stöckel, K. Janischowsky, S. Rohmfeld, J. Ristein, M. Hundhausen, and L. Ley, J. Appl. Phys. 79, 768 (1996).
S. McGinnis, Ph.D. Thesis, Stanford University, 1995.
E. Kondoh, T. Okta, T. Motomo, and K. Ohtsuka, J. Appl. Phys. 73, 3041 (1993).
W. Hsu, J. Appl. Phys. 72, 3102 (1992).
B. Stoner, G. Tessmer, and D. Dreifus, Appl. Phys. Lett. 62, 1803 (1993).
J. Cobine, Gaseous Conductors, Theory and Engineering Applications (Dover Publications, Inc., New York, 1958).
H. Hagstrum, in A Physicist’s Desk Reference, edited by H. Anderson (American Institute of Physics, New York, 1989).
Handbook of Chemistry and Physics (The Chemical Rubber Company, Cleveland, OH, 1970).
T. Mandel, M. Frischholz, R. Helbig, and A. Hammerschimdt, Appl. Phys. 64, 3637 (1994).
R. Glass, L. Spellman, and R. Davis, Appl. Phys. Lett. 59, 2868 (1991).
P. Choong, K. Ravi, L. D’Cruz, and G. Hatch, in Proceedings of the 28th Intersociety Energy Conversion Engineering Conference (American Chemical Society 1, Washington, DC, 1993), p. 555.
M. Schreck, T. Baur, and B. Stritzker, Diam. Relat. Mater. 4, 553 (1995).
P. Emmert, Wright Patterson Air Force Base, OH, personal communication (1995).
S. Wolter, J. Glass, and B. Stoner, J. Appl. Phys. 77, 5119 (1995).
P. Reinke, P. Kania, and P. Oelhafen, Thin Solid Films 270, 124 (1995).
S. Yugo, T. Kimura, and T. Kanai, Diam. Relat. Mater. 2, 328 (1992).
B. Chapman, Glow Discharge Processes (John Wiley and Sons, New York, 1980).
H. Chan, Ph.D. Thesis, Stanford University, 1990.
J. McVittie, C. Cheng, J. Zheng, G. Pelts, Z-K. Hsiau, and K. Saraswat, Speedie User’s Manual (Stanford University–Integrated Circuits Laboratory, Version 2.5, 1993), p. 8
J. Ulacia and J. McVittie, in Proceedings of the Seventh Symposium on Plasma Processing, edited by G. Mathad and G. Schwatz (The Electrochemical Society 88–22, Pennington, NJ, 1988), p. 50.
H. Chatham, D. Hils, R. Robertson, and A. Gallagher, J. Chem. Phys. 81, 1770 (1984).
M. A. Lieberman, J. Appl. Phys. 65, 4186 (1989).
W. Vincenti and C. Kruger, Jr., Introduction to Physical Gas Dynamics (Krieger Publishing Co., Malabar, FL, 1986), p. 54.
W. Rohsenow and H. Choi, Heat, Mass, and Momentum Transfer (Prentice-Hall, Englewood Cliffs, NJ, 1961).
E. Spencer, P. Schmidt, D. Joy, and F. Sansalone, Appl. Phys. Lett. 29, 118 (1976).
J. Angus, P. Koidl, and S. Domitz, in Plasma Deposited Thin Films, edited by J. Mort and F. Jansen (CRC Press, Inc., Boca Raton, FL, 1986).
H. Steffen, D. Marton, and J. Rabalais, Phys. Rev. Lett. 68, 1726 (1992).
J. Koike, D. Parkin, and T. Mitchel, Appl. Phys. Lett. 60, 1450 (1992).
F. Seitz and J. Kohler, in Progress in Solid State Physics, edited by F. Seitz and D. Turnbull (Academic Press, New York, 1956).
C. Weissmantel, in Thin Films from Free Atoms and Particles, edited by K. Klabunde (Academic Press, Inc., Orlando, FL, 1985), p. 153.
B. Dodson, in Laser and Particle-Beam Modification of Chemical Processes on Surfaces, edited by A. W. Johnson, G. L. Loper, and T. W. Sigmon (Mater. Res. Soc. Symp. Proc. 129, Pittsburgh, PA, 1989), p. 29.
C. Weissmantel, Thin Solid Films 92, 55 (1982).
G. C. Suits, Am. Scientist 52, 395 (1964).
Y. Lifshitz, S. R. Kasi, and J. W. Rabalais, Phys. Rev. Lett. 62, 1290 (1989).
Y. Lifshitz, G. Lempert, and E. Grossman, Phys. Rev. Lett. 72, 2753 (1994).
J. Robertson, Diam. Relat. Mater. 3, 361 (1994).
J. Robertson, Diam. Relat. Mater. 4, 549 (1995).
Y. Lifshitz, S. Kasi, J. Rabalais, and W. Eckstein, Phys. Rev. B 41, 10468 (1990).
J. Angus and C. Hayman, Science 241, 913 (1988).
J. Robertson, Diam. Relat. Mater. 2, 984 (1993).
B. Dodson, in Processing and Characterization of Materials Using Ion Beams, edited by L. E. Rehn, J. Greene, and F.A. Smidt (Mater. Res. Soc. Symp. Proc. 128, Pittsburgh, PA, 1989), p. 137.
H. Windischmann, J. Appl. Phys. 62, 1800 (1987).
Y. Lifshitz, G. Lempert, S. Rotter, I. Avigal, C. Uzan-Saguy, R. Kalish, J. Kulik, D. Marton, and J. Rabalais, Diam. Relat. Mater. 3, 542 (1994).
D. McKenzie, D. Müller, and B. Pailthorpe, Phys. Rev. Lett. 67, 773 (1991).
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McGinnis, S.P., Kelly, M.A. & Hagström, S.B. Insights into the ion-assisted nucleation of diamond on silicon. Journal of Materials Research 12, 3354–3366 (1997). https://doi.org/10.1557/JMR.1997.0440
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DOI: https://doi.org/10.1557/JMR.1997.0440