Abstract
Three natural type IIa diamond crystals were used for forced diffusion of boron. The diffusion was performed under bias otherwise with the same conditions. The boron diffusion coefficient in diamond was found to be 8.4 × 10–15 and 4 × 10–14 cm2/s at 1000 °C, depending on the direction of the electric field. The drift velocity of boron in diamond under 850 V at 1000 °C was found to be about 1.2 × 10–8 cm/s.
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Sung, T., Popovici, G., Prelas, M.A. et al. Boron diffusion into diamond under electric bias. Journal of Materials Research 12, 1169–1171 (1997). https://doi.org/10.1557/JMR.1997.0161
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DOI: https://doi.org/10.1557/JMR.1997.0161