Abstract
Epitaxial TiN films were grown on cubic (3C)-SiC(001) and hexagonal (6H)-SiC(0001) substrates by ultrahigh vacuum reactive magnetron sputtering from a Ti target in a mixed Ar and N2 discharge at a substrate temperature of 700 °C. Cross-sectional transmission electron microscopy, including high-resolution imaging, showed orientational relationships TiN(001) || 3C-SiC(001), and TiN[110] || 3C-SiC[110], and TiN(111) || 6H-SiC(0001) and TiN[110],[101] || 6H-SiC[1210]. In the latter case, twin-related TiN domains formed as the result of nucleation on SiC terraces with an inequivalent stacking sequence of Si and C. The TiN/SiC interface was locally atomically sharp for both SiC polytypes. Defects in the TiN layers consisted of threading double positioning domain boundaries in TiN(111) on 6H-SiC. Stacking faults in 3C-SiC did not propagate upon growth of TiN. Room-temperature resistivity of TiN films was ρ = 14 μΩ cm for 6H-SiC(0001) and ρ = 17 μΩ cm for 3C-SiC(001) substrates. Specific contact resistance of TiN to 6H-SiC(0001) was 1.3 × 10−3 Ω cm2 for a 6H-SiC substrate with an n-type doping of 5 × 1017 cm−3.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
J. Crofton, P. A. Barnes, J.R. Williams, and J.A. Edmond, Appl. Phys. Lett. 62, 384 (1993).
N. Lundberg and M. Östling, Appl. Phys. Lett. 63, 3069 (1993).
L. M. Porter, R.F. Davis, J.S. Bow, M.J. Kim, and R.W. Carpenter, J. Mater. Res. 10, 26 (1995).
M. G. Rastegaeva and A. L. Syrkin, Sensors and Actuators A 33, 95 (1992).
R. C. Glass, L. M. Spellman, S. Tanaka, and R. F. Davis, J. Vac. Sci. Technol. A 10, 1625 (1992).
K. L. Moazed, Metall. Trans. A 23A, 1999 (1992).
T. M. Parrill and Y. W. Chung, Surf. Sci. 271, 395 (1992).
J. S. Chen, E. Kowala, M-A. Nicolet, L. Baud, C. Jaussaud, R. Madrar, and C. Bernard, J. Appl. Phys. 75, 897 (1994).
C. Arnado, S. Tyc, F. Wyczinsk, and C. Brylisnki, Proc. ISCMRM 1995 (in press).
B-O. Johansson, J-E. Sundgren, J. E. Greene, A. Rockett, and S. A. Barnett, J. Vac. Sci. Technol. A 3, 303 (1985).
C. Y. Ting and M. Wittmer, Thin Solid Films 96, 327 (1982).
L. Hultman, C-H. Choi, W-A. Chiou, and S. A. Barnett, J. Vac. Sci. Technol. B 9, 221 (1991).
J. Narayan, P. Tiwari, X. Chen, J. Singh, R. Chowdhury, and T. Zheleva, Appl. Phys. Lett. 61, 12909 (1992).
T. Zheleva, K. Jagannadham, and J. Narayan, J. Appl. Phys. 75, 860 (1994).
O. Kordina, L-O. Björketun, A. Henry, C. Hallin, R. C. Glass, L. Hultman, J-E. Sundgren, and E. Janzén, J. Cryst. Growth 154, 303 (1995).
O. Kordina, C. Hallin, R. C. Glass, A. Henry, and E. Janzén, Proc. 5th Int. Conf. on Silicon Carbide and Related Materials (ICSCRM), Inst. of Phys. Conf. Series 137, 41–44 (1993).
L. Hultman, S. A. Barnett, J-E. Sundgren, and J. E. Greene, J. Cryst. Growth 92, 639 (1988).
D. K. Schroeder, in Semiconductor Material and Device Characterization (John Wiley & Sons, Inc., New York, 1990).
E. Kuphal, Solid State Electron. 24, 69 (1981).
F. Owman, C. Hallin, P. Mårtensson, and E. Janzén, J. Cryst. Growth (in press).
F. Owman, C. Hallin, and P. Mårtensson, Surf. Sci. 330, L639 (1995), and references therein.
Q. Wahab, M.R. Sardela, Jr., L. Hultman, A. Henry, M. Willander, E. Janzén, and J-E. Sundgren, Appl. Phys. Lett. 65, 725 (1994).
L. Hultman, M. Shinn, P.B. Mirkarimi, and S.A. Barnett, J. Cryst. Growth 135, 309 (1994).
N. Hirashita, J.E. Greene, U. Helmersson, J. Birch, and J-E. Sundgren, J. Appl. Phys. 70, 4963 (1991).
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Hultman, L., Ljungcrantz, H., Hallin, C. et al. Growth and electronic properties of epitaxial TiN thin films on 3C-SiC(001) and 6H-SiC(0001) substrates by reactive magnetron sputtering. Journal of Materials Research 11, 2458–2462 (1996). https://doi.org/10.1557/JMR.1996.0309
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1557/JMR.1996.0309