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Microstructural evolution of diamond/Si(100) interfaces with pretreatments in chemical vapor deposition

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Abstract

Diamond was deposited on Si(100) substrates by the microwave plasma-assisted chemical vapor deposition method in three steps: carburization, biasing, and growth. High-resolution transmission electron microscopy in cross-sectional view has been used to observe the evolution of microstructures around the interfacial region between diamond and Si in each processing step. The chemistry near the interface was characterized with elemental mapping using an energy-filtered imaging technique with electron energy loss spectroscopy. An amorphous carbon layer, β-SiC and diamond particles, and graphite plates have been observed in the carburization stage. β-SiC can form in epitaxial orientation with Si in the following stage of biasing. Graphite and amorphous carbon were not observed after the bias was applied. Diamond grains were aligned in a strongly textured condition in the growth stage. It has been found that diamond, SiC, and Si all have (111) planes in parallel. The relation of the evolution of microstructure with the processing conditions is also discussed.

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References

  1. W. A. Yarbrough and R. Messier, Science 247, 688 (1990).

    Article  CAS  Google Scholar 

  2. S. Yugo, T. Kanai, T. Kimura, and T. Muto, Appl. Phys. Lett. 58, 1036 (1991).

    Article  CAS  Google Scholar 

  3. B. R. Stoner and J. T. Glass, Appl. Phys. Lett. 60, 698 (1992).

    Article  CAS  Google Scholar 

  4. X. Jiang and C-P. Klages, Diamond Relat. Mater. 2, 1112 (1993).

    Article  CAS  Google Scholar 

  5. X. Jiang, C-P. Klages, R. Zachai, M. Hartweg, and H. J. Fusser, Appl. Phys. Lett. 62, 3438 (1993).

    Article  CAS  Google Scholar 

  6. X. Jiang, K. Schiffmann, A. Westphal, and C. P. Klages, Appl. Phys. Lett. 63, 1203 (1993).

    Article  CAS  Google Scholar 

  7. M. Schreck, R. Hessmer, S. Geier, B. Rauschenbach, and B. Stritzker, Diamond Relat. Mater. 3, 510 (1994).

    Article  CAS  Google Scholar 

  8. S. D. Wolter, B. R. Stoner, J. T. Glass, P. J. Ellis, D. S. Buhaenko, C. E. Jenkins, and P. Southworth, Appl. Phys. Lett. 62, 1215–1217 (1993).

    Article  CAS  Google Scholar 

  9. B. R. Stoner, S. R. Sahaida, J. P. Bade, P. Southworth, and P. J. Ellis, J. Mater. Res. 8, 1334 (1993).

    Article  CAS  Google Scholar 

  10. A. Berger and H. Kohl, Microsc. Microanal. Microstruct. 3, 159 (1992).

    Article  Google Scholar 

  11. R. F. Egerton, Electron Energy-Loss Spectroscopy in the Electron Microscope (Plenum Press, New York, 1986), p. 335.

    Google Scholar 

  12. B. E. Williams and J. T. Glass, J. Mater. Res. 4, 373 (1989).

    Article  CAS  Google Scholar 

  13. L. Chang, in Novel Forms of Carbon, edited by C. L. Renschler, J. J. Pouch, and D. M. Cox (Mater. Res. Soc. Symp. Proc. 270, Pittsburgh, PA, 1992), p. 353.

  14. Y. Shigesato, R. E. Boekenhauer, and B. W. Sheldon, Appl. Phys. Lett. 63, 314 (1993).

    Article  CAS  Google Scholar 

  15. S. Yugo, T. Kanai, and T. Kimura, Diamond Relat. Mater. 1, 388 (1992).

    Article  CAS  Google Scholar 

  16. B. R. Stoner, G-H. M. Ma, S. D. Wolter, W. Zhu, Y. C. Wang, R. F. Davis, and J. T. Glass, Diamond Relat. Mater. 2, 142 (1993).

    Article  CAS  Google Scholar 

  17. S. R. Nutt, D. J. Smith, H. J. Kim, and R. F. Davis, Appl. Phys. Lett. 50, 203 (1987).

    Article  CAS  Google Scholar 

  18. B. R. Stoner, G-H. M. Ma, S. D. Wolter, and J. T. Glass, Phys. Rev. B 45, 11067 (1992).

    Article  CAS  Google Scholar 

  19. C. J. Chen, L. Chang, T. S. Lin, and F. R. Chen, unpublished.

  20. Y. Tzou, J. Bruley, F. Ernst, M. Rühle, and R. Raj, J. Mater. Res. 9, 1566 (1994).

    Article  CAS  Google Scholar 

  21. A. van der Drift, Philips Res. Rep. 22, 267 (1967).

    Google Scholar 

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Authors and Affiliations

  1. Materials Science Center, National Tsing Hua University, Hsinchu, Taiwan, 300, Republic of China

    C. J. Chen

  2. Division of Engineering and Applied Science, National Science Council, Taipei, Taiwan, 10636, Republic of China

    L. Chang

  3. Materials Research Laboratories, Industrial Technology Research Institute, Hsinchu, Taiwan, 31015, Republic of China

    T. S. Lin

  4. Materials Science Center, National Tsing Hua University, Hsinchu, Taiwan, 300, Republic of China

    F. R. Chen

Authors
  1. C. J. Chen
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  2. L. Chang
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  3. T. S. Lin
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  4. F. R. Chen
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Chen, C.J., Chang, L., Lin, T.S. et al. Microstructural evolution of diamond/Si(100) interfaces with pretreatments in chemical vapor deposition. Journal of Materials Research 10, 3041–3049 (1995). https://doi.org/10.1557/JMR.1995.3041

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  • DOI: https://doi.org/10.1557/JMR.1995.3041

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