Abstract
The relation between stresses of sputtered a-Si: H films and the film deposition conditions are investigated. The film stresses change from a large compressive stress of 1000 MPa to an almost stress-free one. They arise from distortions of the Si network via the following two mechanisms. The first results from the inclusion of the Ar-sputtering gas into the films, which provides volume expansion of the film network. The other is due to structural disorders, such as a deviation of the Si bond angle which is generated during the deposition processes. Moreover, it is found that Si–H terminations in the films contribute to reducing the film stresses because the Si–H termination breaks and relaxes the Si network. These effects can be realized as long as the Si–H terminations are homogeneously distributed in the films.
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References
S. Kawakami, 9th Optical Sensors Conference (Firenze, Italy), paper Th2 (May 1993), Vol. 12.
S. Kawakami and O. Hanaizumi, Trans. Institute of Electronics, Information and Communication Engineers (IEICE), C-I 77, 334 (1994).
K. Siraishi and S. Kawakami, Opt. Lett. 15, 516 (1990).
L. M. Mack and A. Reisman, J. Electrochem. Soc. 136, 3433 (1989).
W. Beyer, Tetrahedrally Bonded Amorphous Semiconductors, edited by D. Adler and H. Fritzshce (Plenum Press, New York, 1985), p. 129.
G. Ganguly and A. Matsuda, Phys. Rev. B 7, 3661 (1993).
J. E. Smith, Jr., M. H. Brodsky, B. L. Crowder, and M. I. Nathan, Phys. Rev. Lett. 26, 642 (1971).
M. H. Brodsky, M. Cardona, and J. J. Cuomo, Phys. Rev. B 16, 3556 (1977).
D. Beeman and R. Albert, Adv. Phys. 26, 339 (1977).
M. F. Thorpe, Phys. Rev. B 8, 5352 (1973).
H. Takahashi, H. Nagata, and H. Kataoka, unpublished.
J. A. Aboaf, J. Electrochem. Soc. 116, 1732 (1969).
S. R. Kurtz, Y. S. Tsuno, and R. Tsu, Appl. Phys. Lett. 49, 951 (1986).
J. A. Thoronton, J. Tabock, and D. W. Hoffman, Thin Solid Films 45, 387 (1977).
C. T. Wu, Thin Solid Films 64, 103 (1979).
H. Takahashi, H. Nagata, and H. Kataoka, Jpn. J. Appl. Phys. 33, 4978 (1994).
R. S. Nowicki, W. D. Buckley, W. D. Mackintosh, and I. V. Mitchell, J. Vac. Sci. Technol. 11, 675 (1974).
J. P. Harbison, A. J. Williams, and D. V. Lang, J. Appl. Phys. 55, 946 (1984).
J. C. G. de Sacde, C. N. Afonso, J. L. Escudero, R. Serna, F. Catalina, and E. Bernabeu, Appl. Opt. 31, 6133 (1992).
D. Beeman, R. Tsu, and M. F. Thorpe, Phys. Rev. B 32, 874 (1985).
H. Takahashi, H. Nagata, H. Kataoka, and H. Takai, J. Appl. Phys. 75, 2667 (1994).
J. C. Knights, Jpn. Appl. Phys. 18, 101 (1979).
S. Iizima, H. Okushi, A. Matsuda, S. Yamasaki, K. Nakagawa, M. Mitsumura, and K. Tanaka, Jpn. J. Appl. Phys. 19, 521 (1980).
J. R. Abelson, Appl. Phys. A56, 493 (1993).
R. Banerjee, S. N. Sharma, A. K. Bandyopadhyay, A. K. Batabyal, and A. K. Barua, J. Mater. Sci. Lett. 12, 1316 (1993).
S. C. Moss and J. F. Graczyk, Proc. 10th Int. Conf. Phys. Semicond., edited by S. P. Keller et al. (U.S. Atom. Energy Commission, 1970), p. 658.
K. Tsuji and S. Minomura, J. Phys. 42, C4–233 (1981).
A. Barna, P. B. Barna, G. Radnoczi, L. Toth, and P. Thomas, Phys. Status Solidi A 41, 81 (1977).
J. C. Phillips, J. Non-Cryst. Solids 34, 153 (1979).
G. H. Dohler, R. Dandoloff, and H. Bilz, J. Non-Cryst. Solids 42, 87 (1980).
T. Shimizu, J. Non-Cryst. Solids 59/60, 117 (1983).
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Takahashi, H., Nagata, H., Kataoka, H. et al. Mechanisms of intrinsic stresses generation in sputtered amorphous Si: H films. Journal of Materials Research 10, 2736–2741 (1995). https://doi.org/10.1557/JMR.1995.2736
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DOI: https://doi.org/10.1557/JMR.1995.2736