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Growth defects in diamond films

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Abstract

Growth defects in diamond films grown by plasma-assisted chemical vapor deposition (CVD) were studied by high resolution electron microscopy. Several features of the microstructure were resolved and their importance to the growth of the diamond film was evaluated. The observations included various twin boundaries of the type ∑ = 3, as well as ∑ = 9, ∑ = 27, and ∑ = 81, which form by an interaction of lower order twins. These higher order boundaries are loci of intersection points of growing planes on two adjacent twins and can serve as an indicator for the local crystal growth direction. The central nucleation site for the growing planes in many cases can be traced back to a quintuplet twin point. A twin quintuplet has five re-entrant angles and thus serves as a preferred nucleation site for new planes as the crystal grows.

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Authors and Affiliations

  1. Department of Materials Engineering, Technion, Haifa, Israel

    D. Shechtman

  2. University of Oxford, Oxford, United Kingdom

    J. L. Hutchison

  3. National Institute of Standards and Technology, 20899, Gaithersburg, Maryland, USA

    L. H. Robins, E. N. Farabaugh & A. Feldman

Authors
  1. D. Shechtman
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  2. J. L. Hutchison
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  3. L. H. Robins
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  4. E. N. Farabaugh
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  5. A. Feldman
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Additional information

Guest scientist at the Johns Hopkins University and at the National Institute of Standards and Technology.

Ceramics Division, Materials Science and Engineering Laboratory, Technology Administration, United States Department of Commerce

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Shechtman, D., Hutchison, J.L., Robins, L.H. et al. Growth defects in diamond films. Journal of Materials Research 8, 473–479 (1993). https://doi.org/10.1557/JMR.1993.0473

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  • DOI: https://doi.org/10.1557/JMR.1993.0473

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