Abstract
Although amorphous alloys are known to be good diffusion barriers, amorphous nickel-zirconium is shown to react with Si at relatively low temperatures. Diffusion of Ni at 350°C through an amorphous Ni–Zr buffer layer leads to the formation of epitaxial NiSi2on single crystal silicon substrates. Interplay of mobility and thermodynamics is applicable for epitaxial silicide nucleation and growth. Also, a one-step annealing process in oxygen ambient leads to bilayer formation of NiSi2/ZrO2structures on silicon substrates.
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de Reus, R., Tissink, H.C. & Saris, F.W. Low temperature epitaxial NiSi2 formation on Si(111) by diffusing Ni through amorphous Ni–Zr. Journal of Materials Research 5, 341–346 (1990). https://doi.org/10.1557/JMR.1990.0341
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DOI: https://doi.org/10.1557/JMR.1990.0341