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A discussion of the chemical mixing process for in situ preparation of silicon carbide whiskers in silicon nitride powder

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An Erratum to this article was published on 01 September 1988

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Abstract

To produce a homogeneous composite of silicon carbide whiskers in a silicon nitride matrix, the whiskers were formed in situ. The resulting bulk density was higher than that obtained by a physical mixing of the components using a dispersion procedure. Bending strength at room temperature of the in situ formed composite was about the same as that for the physically mixed composite when the small amount of carbon remaining in the in situ formed composite was removed.

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Authors and Affiliations

  1. Osaka University, Institute of Science and Industrial Research, 8-1 Mihogaoka Idaraki, 567, Osaka, Japan

    Shigehiko Yamada

  2. Department of Inorganic Materials, Faculty of Engineering, Tokyo Institute of Technology, 227, Yokohama, Japan

    Shiushichi Kimura

  3. Research Laboratory of Engineering Materials, Tokyo Institute of Technology, 227, Yokohama, Japan

    Yasuda Eiichi, Yasuhiro Tanabe & Yuuichi Asami

Authors
  1. Shigehiko Yamada
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  2. Shiushichi Kimura
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  3. Yasuda Eiichi
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  4. Yasuhiro Tanabe
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  5. Yuuichi Asami
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Yamada, S., Kimura, S., Eiichi, Y. et al. A discussion of the chemical mixing process for in situ preparation of silicon carbide whiskers in silicon nitride powder. Journal of Materials Research 3, 538–544 (1988). https://doi.org/10.1557/JMR.1988.0538

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  • DOI: https://doi.org/10.1557/JMR.1988.0538

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