Abstract
The jet nebulizer sprayed tungsten doped molybdenum trioxide (WMoO3) thin films and its P-N junction diode parameters have been studied for different doping concentrations (0, 3, 6 and 9 wt.%) of tungsten (W). The prepared films were studied by XRD, SEM, EDX, UV and I-V. The structural analyses of XRD and SEM revealed that the WMoO3 films depicted the orthorhombic structure in polycrystalline nature and showed the sub-microsized plate and flake-like structures on the surface. The presence of the elements such as W, Mo and O in the WMoO3 films prepared by jet nebulizer spray (JNS) pyrolysis technique was confirmed by the EDX spectra. From UV-vis analysis, the absorbance decreases up to 3 wt.% of WMoO3 then increases. 3 wt.% WMoO3 film exhibited the minimum band gap energy. The electrical property from I-V represents that the maximum average conductivity obtained as 5.70169×10−12 S/cm for 3 wt.% WMoO3 film. From the I-V measurements in darkness and under the illumination, the different diode parameters of ideality factor (n), barrier height (Φb) and sheet resistance (Rs) of n-WMoO3/p-Si were examined using J-V, Cheung’s and Norde methods.
References
1. M. C. Rao, K. Ravindranadh, A. Kasturi, M. S. Shekhawat, Res. J. Recent Sci. 2 (2013) 67.Search in Google Scholar
2. C. L. Liu, Y. Wang, C. Zhang, X. S. Li, W. S. Dong, Mater. Chem. Phys. 143 (2014) 1111.10.1016/j.matchemphys.2013.11.011Search in Google Scholar
3. J. Griffin, A. J. Pearson, N. W. Scarratt, T. Wang, D. G. Lidzey, A. R. Buckley, Org. Electron. 15 (2014) 692.10.1016/j.orgel.2013.12.028Search in Google Scholar
4. H. M. Martinez, J. Torres, M. E. R. Garcia, L. D. L. Carreno, Physica. B 407 (2012) 3199.10.1016/j.physb.2011.12.064Search in Google Scholar
5. Y. Shen, F. Hu, Y. Yang, Y. Xiao, P. Yan, Z. Li, Surf. Coat. Tech. 240 (2014) 393.10.1016/j.surfcoat.2013.12.062Search in Google Scholar
6. C. Osterwald, G. Cheek, J. B. DuBow, Appl. Phys. Lett. 35 (1979) 775.10.1063/1.90973Search in Google Scholar
7. M. Balaji, J. Chandrasekaran, M. Raja, S. Rajesh, J. Mater. Sci. Mater. Electron. (2016) DOI: 10.1007/s10854-016-5300-0.10.1007/s10854-016-5300-0Search in Google Scholar
8. U. Akin, H. Safak, J. Alloy Compd. 647 (2015) 146.10.1016/j.jallcom.2015.06.164Search in Google Scholar
9. K. A. Gesheva, T. Ivanova, Chem. Vap. Deposition 12 (2006) 231.10.1002/cvde.200506404Search in Google Scholar
10. E. M. Gaigneaux, K. Fukui, Y. Iwasawa, Thin Solid Films 374 (2000) 49.10.1016/S0040-6090(00)01196-2Search in Google Scholar
11. N. Sethupathi, P. Thirunavukkarasu, V. S. Vidhya, R. Thangamuthu, G. V. M. Kiruthika, K. Perumal, H. C. Bajaj, M. Jayachandran J. Mater. Sci. Mater. Electron. 23 (2012) 1087.10.1007/s10854-011-0553-0Search in Google Scholar
12. M. Balaji, J. Chandrasekaran, M. Raja, Mater. Sci. Semicond. Process. 43 (2016) 104.10.1016/j.mssp.2015.12.009Search in Google Scholar
13. Y. Huang, G. Li, J. Feng, Q. Zhang, Thin Solid Films 518 (2010) 1892.10.1016/j.tsf.2009.07.119Search in Google Scholar
14. M. Raja, J. Chandrasekaran, M. Balaji, Silicon (2016) DOI: 10.1007/s12633-016-9413-0.10.1007/s12633-016-9413-0Search in Google Scholar
15. E. Burstein, Phys. Rev. 93 (1954) 632.10.1103/PhysRev.93.632Search in Google Scholar
16. G. Turgut, E. F. Keskenler, S. Aydin, E. Sonmez, S. Dogan, B. Duzgun, M. Ertugrul, Superlattices Microst. 56 (2013) 107.10.1016/j.spmi.2013.01.004Search in Google Scholar
17. X. Zhao, Z. Wu, D. Guo, W. Cui, P. Li, Y. An, L. Li, W. Tang, Semicond. Sci. Technol. 31 (2016) 065010.10.1088/0268-1242/31/6/065010Search in Google Scholar
18. A. R. Babar, P. R. Deshamukh, R. J. Deokate, D. Haranath, C. H. Bhosale, K. Y. Rajpure J. Phys. D: Appl. Phys. 41 (2008) 135404.10.1088/0022-3727/41/13/135404Search in Google Scholar
19. D. Zhou, F. Shi, D. Xie, D. H. Wang, X. H. Xia, X. L. Wang, C. D. Gu, J. P. Tu, J. Colloid Interf. Sci. 465 (2016) 112.10.1016/j.jcis.2015.11.068Search in Google Scholar PubMed
20. N. G. Elfadill, M. R. Hashim, K. M. Chahrour, S. A. Mohammed, Semicond. Sci. Technol. 31 (2016) 065001.10.1088/0268-1242/31/6/065001Search in Google Scholar
21. P. Scherrer, Nachr. Ges. Wiss. Gottingen 26 (1918) 98.Search in Google Scholar
22. V. Madhavi, P. Jeevan Kumar, P. Kondaiah, O. M. Hussain, S. Uthanna, Ionics (2014) DOI: 10.1007/s11581-014-1073-8.10.1007/s11581-014-1073-8Search in Google Scholar
23. K. J. Lethy, D. Beena, V. P. Mahadevan Pillai, V. Ganesan, J. Appl. Phys. 104 (2008) 033515.10.1063/1.2953070Search in Google Scholar
24. V. Nirupama, M. Chandra Sekhar, T. K. Subramanyam, S. Uthanna, J. Phys. Conf. Ser. 208 (2010) 012101.10.1088/1742-6596/208/1/012101Search in Google Scholar
25. S. M. Sze, (2nd ed.): Semiconductor Devices, Wiley, New York (2001), P. 224.Search in Google Scholar
26. B. Keskin, C. Denktas, A. Altındal, U. Avcıata, A. Gul, Polyhedron 38 (2012) 121.10.1016/j.poly.2012.02.033Search in Google Scholar
27. L. R. Canfield, R. Vest, T. N. Woods, R. Korde, Ultraviolet Tech. V 2282 (1994) 31.10.1117/12.186628Search in Google Scholar
28. M. Biber, O. Gullu, S. Forment, R. L. Van Meirhaeghe, A. Turut, Semicond. Sci. Technol. 21 (2006) 1.10.1088/0268-1242/21/1/001Search in Google Scholar
29. L. D. Rao, K. S. Latha, V. R. Reddy, C. J. Choi, Vacuum 119 (2015) 276.10.1016/j.vacuum.2015.06.003Search in Google Scholar
30. N. Senthil kumar, M. Sethu Raman, J. Chandrasekaran, R. Priya, M. Chavali, R. Suresh, Mater. Sci. Semicond. Process. 41 (2016) 497.10.1016/j.mssp.2015.08.020Search in Google Scholar
31. S. K. Cheung, N. W. Cheung, Appl. Phys. Lett. 49 (1986) 85.10.1063/1.97359Search in Google Scholar
32. H. Norde, J. Appl. Phys. 50 (1979) 5052.10.1063/1.325607Search in Google Scholar
33. S Karatas, Microelectron. Eng. 87 (2010) 1935.10.1016/j.mee.2009.11.168Search in Google Scholar
34. R. K. Gupta, K. Ghosh, P. K. Kahol, Physica E 42 (2010) 1509.10.1016/j.physe.2009.12.007Search in Google Scholar
©2017 Walter de Gruyter GmbH, Berlin/Boston
