Abstract
We demonstrate what is believed to be the first use of AlGaInAs quantum wells (QWs) as a saturable absorber in the Q switching of a high-power diode-pumped Nd-doped laser. The barrier layers are designed to locate the QW groups in the region of the nodes of the lasing standing wave to avoid damage. With an incident pump power of , an average output power of with a Q-switched pulse width of at a pulse repetition rate of was obtained.
© 2007 Optical Society of America
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