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Absorption profile modulation by means of 1D digital plasmonic gratings

P. Zilio, D. Sammito, G. Zacco, and F. Romanato

Open Access Open Access

Abstract

Optical simulations of 1D digital plasmonic gratings on a Silicon substrate are performed by means of the Finite Elements Method and a modal analysis. The different mechanisms of transmission of the light are elucidated. The absorption profile in Silicon can be modulated and controlled changing the geometry. Configuration maps allow to determine the different optical regimes. Surface Plasmon Polaritons and cavity-mode resonances are shown to be effectively exploitable to enhance NIR-light absorption in different shallower regions of the underlying Silicon.

©2010 Optical Society of America

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Figures (6)
Fig. 1
Fig. 1 (Color online) Sketch of the model.

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Fig. 2
Fig. 2 (Color online) Magnetic field norm enhancements. (a) h = 184nm, d = 340nm: CM-resonance; (b) h = 161nm, d = 710nm: SPP-CM resonance; (c) h = 175nm, d = 278nm: WR-CM resonance.

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Fig. 3
Fig. 3 (Color online) FEM-calculated transmittance (a) and absorption enhancement (b) map within 300nm in Silicon with respect to perfect AR-coated Silicon. Overplotted black and grey lines mark respectively CM and SPP resonances according to the analytical model. White lines mark configurations which present a WR anomaly. Crosses mark configurations whose absorption profile is reported in Fig. 4.a.

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Fig. 4
Fig. 4 (a) Absorption profile enhancement with respect to perfect AR-coated Silicon in configurations marked with crosses in Fig. 3: h = 136nm,d = 765nm (light gray); h = 148nm,d = 735 (medium gray); h = 163nm, d = 705nm (black); inset: absorption profiles within 1μm depth. (b) Absorption profile enhancement in configurations near the cross in Fig. 5: h = 175nm and d respectively 285nm (black), 300nm (medium gray), 320nm (light gray). Black dots and circles represent the contributions to the whole black absorption profile coming from the n = ± 1 and n = 0 diffraction orders respectively.

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Fig. 5
Fig. 5 (color online) (a) Absorption enhancement within 40µm in Silicon with respect to Silicon treated with perfect AR coating. Overplotted lines are defined as in Fig. 3. (b) Left: Extinction length of the absorption profiles calculated in CM-resonant configurations (hCM(d),d); right: absorption within L with grating normalized to absorption within the same L in case of perfect AR-coated Silicon. Grey horizontal lines and circles mark respectively SPP-resonant periods and WR anomalies.

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Fig. 6
Fig. 6 Gray: Extinction length of the absorption profile for different duty cycle values; black: absorption within L normalized to absorption within the same L in case of perfect AR-coated Silicon. Dash-dotted and dashed lines are the contribution to QL from the n = 0 and n = ± 1 diffraction orders respectively. h and d are set to 145nm and 280nm respectively. The set of parameters h = 145, d = 280, duty cycle = 0.2 was found to optimize the absorption enhancement within 40µm ( + 210%).

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Equations (3)

Equations on this page are rendered with MathJax. Learn more.

T = 1 ε 3 ′ | τ 12 | 2 ∑ i = − ∞ + ∞ cos θ i | τ 23 , i 2 | 2 | 1 − | ρ 12 | | ρ 23 | e i ϕ t o t | 2 ,
ϕ t o t = arg ( ρ 12 ) + arg ( ρ 23 ) + 2 k 0 N e f f h ,
k 0 sin α + n G = k 0 Re ( ε ε m / ( ε + ε m ) )   n = 1 , 2...
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