熱工学コンファレンス講演論文集
Online ISSN : 2424-290X
セッションID: 214
会議情報

シリコンマイクロ構造面における部分濡れモデルの適用範囲について
*于 艶坤張 徳建長山 暁子
著者情報
会議録・要旨集 認証あり

詳細
抄録

The partial wetting at nano/microstructured surfaces can be described using the intermediate wetting state between the Cassie-Baxter and Wenzel state. However, the limitation of partial wetting model is still unclear. In this study, surface free energy analysis at the microstructured Si-water interface was performed from both theoretical and experimental aspects to verify the partial wetting model. The effective wetting area was estimated by electrochemical impedance spectroscopy method for the further analysis of the surface free energy experimentally. The partial wetting model was verified at the fabricated microstructured surfaces with its geometrical parameters smaller than 400 μm.

著者関連情報
© 2022 一般社団法人 日本機械学会
前の記事 次の記事
feedback
Top