In recent years, the development of a transparent conductive film using metal nanowires (NW) as a dispersing material has been carried out. Recent studies have reported many methods for fabricating transparent conductive films using Ag NW. However, Ag is a rare metal and there is a problem that the price is susceptible to market fluctuations. In order to utilize inexpensive Al NW as a new dispersing material, we developed a single crystal Al NW array fabrication method. The present method utilizes atomic diffusion to convert Al atoms to NW shape. Compressive stress and stress gradient in the Al thin film which is generated due to the difference in linear expansion coefficient between Al and Si when heating the Al / Si substrate. The atomic diffusion phenomenon caused by such stress is called stress migration (SM). It is a major feature of this method that NW generation is possible with two simple steps, film formation and heating. However, this method has a problem that the generation density of Al NW is low. In this research, we tried to increase the stress gradient by partial etching of Al film and introduce adhesion intermediate layer, and tried to improve generation density. As a result, we could get high density of Al NW with etching depth 10 nm and Cr film thickness 1.5 nm.