Abstract
The influence of a transverse magnetic field on tunnelling through GaAs/AlxGa1-xAs/GaAs heterostructures is investigated theoretically and experimentally. The effect is quite significant for the very thick and low barriers studied. It provides a simple way to determine the barrier transversal time introduced by Stevens, as well as Büttiker and Landauer, from a purely static measurement.
Export citation and abstract BibTeX RIS