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Effect of a Transverse Magnetic Field on the Tunnel Current through Thick and Low Semiconductor Barriers

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Published under licence by IOP Publishing Ltd
, , Citation P. Guéret et al 1987 EPL 3 367 DOI 10.1209/0295-5075/3/3/019

0295-5075/3/3/367

Abstract

The influence of a transverse magnetic field on tunnelling through GaAs/AlxGa1-xAs/GaAs heterostructures is investigated theoretically and experimentally. The effect is quite significant for the very thick and low barriers studied. It provides a simple way to determine the barrier transversal time introduced by Stevens, as well as Büttiker and Landauer, from a purely static measurement.

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