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Home / Journal of Nanoscience and Nanotechnology, Volume 17, Number 10

Resistive Switching Characteristics of Tantalum Oxide and Titanium Oxide Heterojunction Devices

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In this study, single-layer and trilayer devices with Pt/Ti/TaO2/Pt and Pt/Ti/TiOx/TaO2/TiO x /Pt structures were fabricated. For the trilayer device, a tantalum oxide thin film was sandwiched between the titanium oxide thin films. The thickness of the tantalum oxide in the single-layer device was ~20 nm. The total trilayer oxide thickness was ~17.5 nm. The trilayer heterojunction device exhibited very stable bipolar resistive switching, which could be caused by the formation and rupture of the conducting filaments (CFs) in the oxide switching layers. The trilayer device showed better endurance and retention characteristics and low SET and RESET voltages, with very small variations. The conduction mechanisms of ohmic conduction, space-charge-limited conduction, Poole-Frenkel emission, and Schottky conduction have been investigated as the possible conduction mechanisms for the resistive switching of the devices.

Keywords: RRAM; Resistive Switching; Tantalum Oxide; Titanium Oxide

Document Type: Research Article

Affiliations: 1: Department of Physics, Myongji University, Gyeonggi-do 449-728, Republic of Korea 2: Department of Material Science and Engineering, Myongji University, Gyeonggi-do 449-728, Republic of Korea 3: Department of Nanotechnology and Advanced Materials Engineering, Sejong University, Seoul 143-747, Republic of Korea

Publication date: 01 October 2017

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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