Electron Eigenstates in Quantum Dots Revealed by Temperature Derivative Capacitance Spectroscopy
A novel method is presented for detecting confined energy states in quantum dots embedded in a junction space charge region, where the reverse bias is used to discharge the initially occupied energy levels. By determining the temperature derivative of junction capacitance as a function
of bias voltage and temperature, spectra are obtained with peaks revealing the existence of electron states in InGaAs/GaAs quantum dots structure grown by molecular beam epitaxy. The method is compared with admittance based techniques and theory used earlier for interpretation of experimental
data.
Keywords: ADMITTANCE SPECTROSCOPY; QUANTUM DOTS; TEMPERATURE DERIVATIVE CAPACITANCE SPECTROSCOPY
Document Type: Research Article
Publication date: 01 December 2011
- Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
- Editorial Board
- Information for Authors
- Subscribe to this Title
- Terms & Conditions
- Ingenta Connect is not responsible for the content or availability of external websites
- Access Key
- Free content
- Partial Free content
- New content
- Open access content
- Partial Open access content
- Subscribed content
- Partial Subscribed content
- Free trial content