Abstract
Corning's proprietary Silicon-on-Glass (SiOG) technology comprises two major processes - the wafer bonding and the layer transfer. Both processes govern the quality of the transferred film. A strong bond between the silicon and the glass substrates is desirable to facilitate the layer transfer process. The bonding energy between two substrates is a crucial measure to gauge the integrity of the wafer bonding and subsequently influences the final film-transfer properties. This work focuses on the characterization of the bonding energy as a function of temperature and attempts to understand the physical/chemical interaction occurring therein. Silicon wafers bonded to various glasses have been characterized. The correlation between the bond energy and the glass attributes, such as, Young's Modulus, strain point, coefficient of thermal expansion, surface roughness, constituents, are discussed.