Effect of Ion Implantation and Anneals on Fully-strained SiC and SiC:P Films using Multiple Characterization Techniques

Anita Madan; Jinghong Li; Zhibin Ren; B F. Yang; Eric C. Harley; Thomas N. Adam; Rainer Loesing; Zhengmao Zhu; Teresa Pinto; Ashima Chakravarti; Abhishek Dube; Rohit Takalkar; J. W. Weijtmans; Linda R. Black; Dominic J. Schepis

doi:10.1149/1.2986790

ECS Transactions

Effect of Ion Implantation and Anneals on Fully-strained SiC and SiC:P Films using Multiple Characterization Techniques

Anita Madan¹, Jinghong Li¹, Zhibin Ren¹, B F. Yang², Eric C. Harley¹, Thomas N. Adam¹, Rainer Loesing¹, Zhengmao Zhu¹, Teresa Pinto¹, Ashima Chakravarti¹, Abhishek Dube¹, Rohit Takalkar¹, J. W. Weijtmans³, Linda R. Black³ and Dominic J. Schepis¹

© 2008 ECS - The Electrochemical Society
ECS Transactions, Volume 16, Number 10 Citation Anita Madan et al 2008 ECS Trans. 16 325 DOI 10.1149/1.2986790

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² Advanced Micro Devices

³ AMD

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Abstract

In addition to device scaling, strain engineering using SiC stressors in the S/D regions is important for nFET performance enhancement. In this paper, we review the characterization of fully-strained epitaxial SiC and in-situ doped SiC:P films for various ion implant conditions and anneals that are typically used in traditional CMOS flows. Full characterization has helped identify process integration schemes which give significant drive current enhancements.

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