Abstract
Amorphous silicon nitride films have been deposited in a gas flow system by the ammonolysis of silicon tetrachloride and the nitridation of silane with ammonia on heated substrate surfaces. The dependence of the deposition rate on the substrate temperature and the reactant composition and flow rate are discussed. The deposited films have been shown by the chemical analysis and electron beam induced crystallization to have the composition 
. The density, refractive index, infrared absorption, and dissolution rate of deposited silicon nitride films have been determined. The substrate temperature during the deposition process appears to have the most significant influence on these properties, particularly density and dissolution rate. Silicon nitride films can be used as masks against the diffusion of aluminum, boron, and phosphorus into silicon. However, these dopants have been found to react with silicon nitride in varying degrees at high temperatures, and these reactions must be considered in determining the thickness of silicon nitride film required for masking purposes.