Abstract
The experimental procedure for controlled vapor‐liquid‐solid, or VLS, crystal growth is discussed for silicon. The hydrogen reduction of 
was used as transport reaction, and gold as the liquid‐forming impurity. The stability of the liquid droplet, which is the main criterion for controlled VLS growth, is discussed in detail. It is shown that an adverse temperature gradient or an oversupply of silicon from the vapor may render the liquid droplet unstable, thereby terminating controlled VLS growth. Silicon crystals can be grown epitaxially on perfect or imperfect silicon substrates. The control of both location of crystal growth and of diameter and length of the crystals is demonstrated.