Abstract
Electrical properties of n‐type polycrystalline indium phosphide deposited on molydenum substrates are investigated as a function of deposition conditions. For undoped films, the electron concentration is found to be 1015–1017cm−3 and tends to increase with the increase in deposition temperature. The electron mobility and resistivity are almost constant irrespective of varying deposition conditions. On the other hand, the electrical properties of sulfur‐doped films are found to be strong functions of deposition conditions and doping level. A grain boundary carrier trapping model is applied to explain the electronic transport properties of the polycrystalline films. The barrier height and the density of trapping states at grain boundaries are calculated.