Abstract
The effects of the ammonia‐to‐silane ratio, 
, during deposition, and of postdeposition heating on chemically bound H in 1000Å silicon‐nitride films have been investigated using multiple internal reflection (MIR) spectroscopy. The films were deposited at 700°C with 
equal to 10:1, 100:1, and 1000:1 in an Ar carrier gas. Vibrational modes for N‒H and Si‒H bonded centers show that H is incorporated into the films. The sum of the 
and 
band intensities (total bound H) increased with 
. The 
band intensity, however, was largest in the 100:1 film. The increase in bound H with 
is attributed to an increase in reactive H from 
decomposition in the presence of incompletely bonded Si and N. The decrease in 
centers when 
is increased from 100:1 to 1000:1 is attributed to more complete Si‒N bonding. Annealing behavior at 800°C suggests an initial transfer of H from N‒H to Si‒H bonds in 10:1 and 100:1 films consistent with the presence of incompletely bonded Si. Bonding of implanted H in 
was demonstrated by isotopic substitution of D for H, and a calibration to determine H concentrations from MIR measurements was obtained. Bond energy‐limited H loss is suggested to explain an observed mass‐independent annealing for implantation‐produced 
and 
centers.