Abstract
A new technology for leveling LSI surfaces was developed by stabilizing the sputter etch rate of organic resists. Projections on LSI surfaces were coated with an organic resist, and etched off together with the resist, leaving a smooth surface. It has been reported by Vossen et al. that the sputter etch rate of organic resists was irreproducible and varied when they were etched together with oxides, such as 
. However, in this work, the etch rate of those resists could be made very stable and was nearly equal to that of 
and 
when they were etched in highly purified argon atmosphere.