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U. Balachandran1 and N. G. Eror1
© 1982 ECS - The Electrochemical Society
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Citation U. Balachandran and N. G. Eror 1982 J. Electrochem. Soc. 129 1021
DOI 10.1149/1.2124008
214 Total downloads
The electrical conductivity of polycrystalline 
doped with 0.1–2 atom percent lanthanum was determined for the oxygen partial pressure range of 100–10−22 atm and temperature range of 850°–1050°C. Two types of charge compensation were observed, electronic and ionic. In the overstoichiometric or ionic compensation range of the oxide, a model involving a shear structure is considered.
