Abstract
The techniques of Rutherford backscattering spectrometry, neutron activation, and transmission electron microscopy were employed in this extensive study of the thermal oxidation of arsenic implanted polycrystalline silicon (polysilicon) films. Some evidence for slower oxidation rates were found for polysilicon layers lying over silicon dioxide substrate as compared to the oxidation rates of films lying directly over bare silicon. Complete oxidation of films lying over silicon dioxide substrates left scattered arsenic‐silicon‐oxygen inclusions trapped at the original polysilicon/silicon dioxide interface. Significant arsenic diffusion through the underlying silicon dioxide layer, into the silicon substrate, was measured after the complete oxidation of thick polysilicon films over thin silicon dioxide substrates.