Topological Effects Regarding Edge Structures in CVD Processes

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© 1990 ECS - The Electrochemical Society
, , Citation J. Schlote et al 1990 J. Electrochem. Soc. 137 1939 DOI 10.1149/1.2086835

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1 Academy of Sciences of the GDR, Institute for Semiconductor Physics, PSF 409, Frankfurt (Oder), 1200 Germany

Dates

  1. Received 19 June 1989
  2. Revised 9 January 1990

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Abstract

In connection with step coverage in CVD there are fundamental differences in behavior between top (outer edge) and bottom (inner edge) parts which do not depend on process characteristics. We propose a simple mathematical model to explain these differences.

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