Preparation and Properties of Sb2 S 3 Thin Films for Photoelectrochemical Applications

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© 1994 ECS - The Electrochemical Society
, , Citation L. P. Deshmukh et al 1994 J. Electrochem. Soc. 141 1779 DOI 10.1149/1.2055004

1945-7111/141/7/1779

Abstract

A modified chemical deposition process has been employed for the preparation of antimony trisulfide thin layers onto the plane glass and stainless steel substrates. The as‐deposited samples on baking at 120°C are orange‐red in color and turn into the dark gray variety on heating to 200°C in an air ambient. The surface topography shows the polycrystalline nature of the samples. This is supported by x‐ray diffraction observations. The deposits are of n‐type with an electron activation energy of 0.80 eV. A , photoelectrochemical cell was then devised and has been characterized in dark and in light in terms of electrical and optical properties. A short‐circuit current () of 0.14 mA/cm2 and an open‐circuit voltage () equal to 0.155 V are obtained from this cell configuration. The calculated efficiency approached to 0.008%. The other cell parameters have been determined from these studies.

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10.1149/1.2055004