Abstract
Microcrystalline silicon (μc‐Si:H) films were deposited at 250°C from the reaction of 
with 
gas excited in an inductively couple remote plasma. The deposition rate, microstructure, and material properties of μc‐Si:H depended on the composition of hydrogen and helium in the plasma. Si films deposited on a hydrogen plasma showed columnar and microcrystalline structure with a grain size of about 200 Å or less, and had an optical bandgap of about 2.05 to 2.1 eV. The microstructure parameter 
in the film) and Urbach tail slope decreased with increasing 
fraction in the plasma gas. On the other hand, amorphous (a‐Si:H) film was deposited with higher deposition rate when pure He was used as plasma gas and the optical bandgap of this film was 2.18 eV. The surface of a‐Si:H film was smoother than that of μc‐Si:H.