Abstract
The energy-band relations and electronic properties for the light absorber/protection-layer stack of TiO2-stabilized Si photoanodes have been determined by ambient pressure x-ray synchrotron radiation photoelectron spectroscopy under an applied potential (operando), from single core-level emission lines. The experiments have also been complemented with laboratory-based monochromatic XPS data. Electrochemical parameters are additionally derived directly from x-ray photoemission data, and a method is presented to derive interface-state densities from such operando data.