Abstract
Reduced performance in Gallium Nitride (GaN)-based high electron mobility transistors (HEMTs) as a result of self-heating has been well-documented. A new approach, termed "gate after diamond," is shown to improve the thermal budget of the deposition process and enable large-area diamond in a reliable and scalable way without degrading the gate metal. This work will highlight initial assessments of top-side diamond integration in GaN HEMTs as well as development efforts on back-side diamond coatings and diamond contacts for further improvements to the thermal management scheme.