Fabrication and Optical Characterization of Self-Standing Wide-Gap Nanocrystalline Silicon Layers

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Published 20 April 2010 Copyright (c) 2010 The Japan Society of Applied Physics
, , Citation Romain Mentek et al 2010 Jpn. J. Appl. Phys. 49 04DG22 DOI 10.1143/JJAP.49.04DG22

1347-4065/49/4S/04DG22

Abstract

The fabrication of self-standing thin layers of nanocrystalline silicon to use as a top-cell in multijunction silicon-based solar cells has been investigated. Study on the effects of different oxidation processes such as rapid thermal oxidation (RTO) and high-pressure water vapor annealing (HWA) on the optical characteristics has also been carried out. Samples treated with a combination of RTO and HWA feature particularly interesting photonic features such as efficient and stable blue photoluminescence as well as a blue shift of the absorption edge corresponding to a widening of the band gap due to quantum confinement in nanodots of silicon. Such interesting properties are expected to lead to potential application in the photovoltaic field.

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10.1143/JJAP.49.04DG22