Voltage-Assisted Magnetization Switching in Ultrathin Fe80Co20 Alloy Layers

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Published 22 May 2009 ©2009 The Japan Society of Applied Physics
, , Citation Yoichi Shiota et al 2009 Appl. Phys. Express 2 063001 DOI 10.1143/APEX.2.063001

1882-0786/2/6/063001

Abstract

Growing demands for the voltage-driven spintronic applications with ultralow-power consumption have led to new interest in exploring the voltage-induced magnetization switching in ferromagnetic metals. In this study, we observed a large perpendicular magnetic anisotropy change in Au(001)/ultrathin Fe80Co20(001)/MgO(001)/polyimide/indium tin oxide (ITO) junctions, and succeeded in realizing a clear switching of magnetic easy axis between in-plane and perpendicular directions. Furthermore, employing a perpendicularly magnetized film, voltage-induced magnetization switching in the perpendicular direction under the assistance of magnetic fields was demonstrated. These pioneering results may open a new window of electric-field controlled spintronics devices.

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