Abstract
A nonvolatile resistance hysteresis is observed in the current–voltage (I–V) characteristics of gold nanogap junctions when pulse bias voltages are applied. In order to discuss the influence of substrates on this resistance change, the I–V characteristics of a gold nanogap junction under which a SiO2 substrate was etched were evaluated. The I–V characteristics show a similar resistance hysteresis to that on a nanogap junction without etching. The results indicate that substrate structure has almost no influence on the resistance hysterisis. Therefore, it is concluded that these nonvolatile resistance changes occur as a result of changes in only metal electrode parts.
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