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Influence of Substrate Structure on Resistance Switch Using Simple Metal Nanogap Junction

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Published 18 January 2008 Copyright (c) 2008 The Japan Society of Applied Physics
, , Citation Yasuhisa Naitoh et al 2008 Jpn. J. Appl. Phys. 47 400 DOI 10.1143/JJAP.47.400

1347-4065/47/1R/400

Abstract

A nonvolatile resistance hysteresis is observed in the current–voltage (IV) characteristics of gold nanogap junctions when pulse bias voltages are applied. In order to discuss the influence of substrates on this resistance change, the IV characteristics of a gold nanogap junction under which a SiO2 substrate was etched were evaluated. The IV characteristics show a similar resistance hysteresis to that on a nanogap junction without etching. The results indicate that substrate structure has almost no influence on the resistance hysterisis. Therefore, it is concluded that these nonvolatile resistance changes occur as a result of changes in only metal electrode parts.

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10.1143/JJAP.47.400