Abstract
Growth of semipolar Group-III nitrides based devices offers a means of reducing the deleterious effects of the polarization-induced electric fields present in the polar quantum wells. We report on the fabrication of blue InGaN/GaN multiple-quantum well light-emitting diodes (LEDs) on semipolar (10-1-1) and (10-1-3) oriented GaN templates. A maximum on-wafer continuous wave output power of 190 µW was measured at 20 mA for 300×300 µm2 devices, and output power as high as 1.53 mW was measured at 250 mA. Drive-current independent electroluminescence peak at 439 nm was observed for the LEDs grown on both the planes. The current–voltage characteristics of these LEDs showed rectifying behavior with a forward voltage of 3–4 V at 20 mA.