Giant and Stable Conductivity Switching Behaviors in ZrO2 Films Deposited by Pulsed Laser Depositions

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Published 25 February 2005 Copyright (c) 2005 The Japan Society of Applied Physics
, , Citation Soohong Kim et al 2005 Jpn. J. Appl. Phys. 44 L345 DOI 10.1143/JJAP.44.L345

1347-4065/44/2L/L345

Abstract

ZrO2 films have been deposited on Pt/Ti/SiO2/Si substrates by pulsed laser deposition methods. Giant and stable conductivity switching behaviors with maximum on/off ratio of 106 and switching endurance of 105 times are observed in a typical Pt/ZrO2/Pt structure. The Pt/ZrO2/Pt structure exhibits two ohmic behaviors in the low-voltage region (V < 1.4 V) depending on the value of previously applied voltage and Schottky-type conduction in the high-voltage region (1.4 V< V <8.9 V). It seems that the conductivity switching behaviors result from the changes in both the Schottky barrier and the bulk conductivity controlled by applied voltages.

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10.1143/JJAP.44.L345