Boron-Rich Semiconducting Boron Carbide Neutron Detector

, , and

Published 11 January 2005 • Copyright (c) 2005 The Japan Society of Applied Physics
, , Citation Andrew D. Harken et al 2005 Jpn. J. Appl. Phys. 44 444 DOI 10.1143/JJAP.44.444

Download Article PDF

Article metrics

90 Total downloads

Share this article

Author affiliations

1 Department of Mechanical Engineering, and Center for Materials Research and Analysis, N104 Walter Scott Engineering Center, 17th & Vine Streets, University of Nebraska-Lincoln, Lincoln, Nebraska 68588-0656, U.S.A.

2 Department of Physics, and Center for Materials Research and Analysis, Behlen Laboratory, University of Nebraska-Lincoln, Lincoln, Nebraska 68588-0111, U.S.A.

Dates

  1. Received 15 March 2004
  2. Accepted 27 October 2004
  3. Published

Buy this article in print

Journal RSS
Sign up for new issue notifications
1347-4065/44/1R/444

Abstract

Data on the neutron detection capabilities of a variety of boron carbide/Si heterojunction diodes is presented. The pulse height spectra are compared with previously measured conversion layer devices and the variations in shape and position of the peaks are discussed.

Export citation and abstract BibTeX RIS

Previous article in issue
Next article in issue
10.1143/JJAP.44.444