ZrB2 Substrate for Nitride Semiconductors

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Published 1 April 2003 • Copyright (c) 2003 The Japan Society of Applied Physics
, , Citation Hiroyuki Kinoshita et al 2003 Jpn. J. Appl. Phys. 42 2260 DOI 10.1143/JJAP.42.2260

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1 Kyocera Corporation Youkaichi Plant, 1166-6 Nagatanino, Hebimizo-cho, Youkaichi, Shiga 527-8555, Japan

2 National Institute for Materials Science, Advanced Materials Laboratory, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan

3 Faculty of Science and Technology, High-Tech Research Center, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan

4 Department of Electronic Science and Engineering, Kyoto University, Yoshida-Honmachi, Sakyo-ku, Kyoto 606-8501, Japan

Dates

  1. Received 24 September 2002
  2. Accepted 27 October 2002
  3. Published

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1347-4065/42/4S/2260

Abstract

Zirconium diboride (ZrB2) has excellent properties as an electrically conductive substrate for nitride semiconductors. In this paper, the bulk growth of ZrB2 by a floating-zone method and some properties of ZrB2, together with a brief summary of heteroepitaxial growth of gallium nitride (GaN) by molecular beam epitaxy (MBE) and metalorganic vapor phase epitaxy (MOVPE), are presented. By optimizing the bulk growth conditions, a 20-mm-diameter ZrB2 single crystal was obtained. The cleavage direction of the ZrB2 (0001) substrate was confirmed to be parallel to [1120], which is parallel to that of GaN (0001). Epitaxial growth by both MBE and MOVPE was demonstrated. The grown n-type GaN/ZrB2 structure exhibited ohmic-like current–voltage behavior. These results indicate that ZrB2 has potential for application to the substrate for nitride semiconductors.

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10.1143/JJAP.42.2260