Abstract
We report on room-temperature 1.54 µm electroluminescence, for the first time, of Er,O-codoped GaAs/GaInP double-heterostructure light emitting diodes grown by organometallic vapor phase epitaxy. The luminescence is due to intra-4f shell transition from the first excited state to the ground state of Er3+ ions. The erbium and oxygen were uniformly doped in the GaAs active layer with a concentration of 8 ×1018 cm-3. Emission lines in the spectrum indicated successful formation of the Er-2O center and a preferential excitation of the center by current injection. The intensity of the main line observed at 1.538 µm increased linearly with current density and exhibited a tendency to saturate at a current density higher than 20 A/cm2.
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