Abstract
A compact laser-produced plasma X-ray source that radiates 1 nm X-rays with an average power of 24 W in 2π steradians is presented. The X-ray conversion efficiency is 9% of the laser power delivered on target. The 300 W laser power is generated by a compact diode-pumped, solid-state Nd:YAG laser system. The X-ray source was used to demonstrate X-ray lithography of 75 nm lines. The X-ray source is optimized for integration with an X-ray stepper to provide a complete X-ray lithography exposure tool for the manufacture of high-speed GaAs devices.