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Electron and Hole Proximity Effects in the InAs/AlSb/GaSb System

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Copyright (c) 2000 The Japan Society of Applied Physics
, , Citation Jöran H. Roslund et al 2000 Jpn. J. Appl. Phys. 39 2448 DOI 10.1143/JJAP.39.2448

1347-4065/39/4S/2448

Abstract

We have investigated the properties of InAs/AlSb/GaSb electron–hole proximity systems while focusing on the influence of the AlSb barrier between the two quantum wells. We have seen that for thin AlSb barriers there is a drop in mobility due to scattering of electrons by holes. We have also observed a series of secondary absorption peaks in cyclotron resonance spectra that are caused by interband Landau-level transitions.

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10.1143/JJAP.39.2448