Characterization and Control of Domain Structure in SrBi2Ta2O9 Thin Films by Scanning Force Microscopy

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Copyright (c) 1998 The Japan Society of Applied Physics
, , Citation Alexei Gruverman and Yuji Ikeda 1998 Jpn. J. Appl. Phys. 37 L939 DOI 10.1143/JJAP.37.L939

1347-4065/37/8A/L939

Abstract

We used the piezoresponse mode of scanning force microscopy (SFM) to perform the first nanoscale observation of ferroelectric domain structure in as-grown SrBi2Ta2O9 films. By lowering the loading force down to approximately 1 nN and by keeping the imaging voltage just below the coercive voltage, we managed to obtain a sufficiently high contrast between opposite 180° domains without affecting the original domain structure. Local and large-scale ferroelectric switching with subsequent readout in areas of about 0.01 µm2 and 1.5 µm2, respectively, were carried out by applying pulsed- and dc-voltage bias through the conductive tip.

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10.1143/JJAP.37.L939