Anatase-Type TiO2 Thin Films Produced by Lattice Deformation

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Copyright (c) 1997 The Japan Society of Applied Physics
, , Citation Wataru Sugimura et al 1997 Jpn. J. Appl. Phys. 36 7358 DOI 10.1143/JJAP.36.7358

1347-4065/36/12R/7358

Abstract

TiO2 thin films were grown onto SrTiO3 substrates by a molecular beam epitaxy (MBE) method using an oxygen radical source. The structure of the thin films obtained was evaluated by X-ray reflection diffractometer (XRD) and reflection high energy electron diffraction (RHEED); TiO2 thin films were determined to be of anatase type and were epitaxially grown in the direction of the c-axis, parallel to the [001] of the substrates. Near the interface, the a-value of thin films increased and the c-value shrank in comparison to that of anatase powder. These results indicated that the anatase phase of TiO2 was induced by a lattice matching process at the interface between SrTiO3 and TiO2.

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10.1143/JJAP.36.7358