Abstract
The gas combustion of H2 with N2O was investigated to develop a rapid thermal annealing method. Spectra of the light emission caused by the combustion show a gray body irradiation characteristic with a gas temperature of 2200 K with an initial total gas pressure of 500 Torr ([H2]/[N2O]=1). A transient thermometry with a 100-nm-thick Cr film as a temperature sensor formed on a quartz substrate was used to measure temperature changes at the surface during and after combustion. Heating to 800°C was achieved within 2 ms using a substrate preheated to 300°C. The increase of electrical conductivity was achieved from 4×10-7 S/cm to 7×10-4 S/cm by the combustion for 0.5% phosphorus-doped amorphous silicon films.