Abstract
The oxidation behavior of Ta films (500 Å) deposited on Cu as a passivation layer to protect Cu from oxidation has been examined. In the present Ta thin films on Cu, the kinetics of oxidation agree well with one reported in the larger thickness range. Although the outdiffusion of a small amount of Cu through the Ta layer is observed, the Ta layer is effective as a passivation layer during oxidation at 450° C for 1 h, where the entire Ta layer is completely oxidized.