Abstract
Junction properties of an n-Si/poly(3-methylthiophene) (P3MeT) cell are investigated by current-voltage measurements. Efforts have been made to understand and improve the inorganic/organic interface. It was found that a great improvement in junction properties is possible by treating the cell with an aq.HF solution. Since electrical conductivity of P3MeT bulk is little affected by the HF treatment, the improvement is attributed to the enhancement in interactions between P3MeT and n-Si. The cell showed degradation upon exposure to air, but it recovered its original characteristics when it was again treated with an aq.HF solution.